Memori akses acak statik: Perbedaan antara revisi
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'''Memori akses acak statik''' ([[bahasa Inggris]]: '''Static Random Access Memory''', '''SRAM''') adalah sejenis memori [[semikonduktor]].
Kata "statik" menandakan bahwa memori memegang isinya selama listrik tetap berjalan, tidak seperti RAM dinamik ([[Dynamic Random Access Memory|DRAM]]) yang membutuhkan untuk "disegarkan" ("refreshed") secara periodik. Hal ini dikarenakan SRAM didesain menggunakan transistor tanpa kapasitor. Tidak adanya kapasitor membuat tidak ada daya yang bocor sehingga SRAM tidak membutuhkan refresh periodik. SRAM juga didesain menggunakan desain cluster enam transistor untuk menyimpan setiap bit informasi. Desain ini membuat SRAM lebih mahal tetapi juga lebih cepat jika dibandingkan dengan DRAM. Secara fisik chip, biaya pemanufakturan chip SRAM kira kira tiga puluh kali lebih besar dan lebih mahal daripada DRAM. Tetapi SRAM tidak boleh dibingungkan dengan [[memori baca-saja]] dan [[memori flash]], karena ia merupakan [[memori volatil]] dan memegang data hanya bila listrik terus diberikan.
Chip SRAM lazimnya digunakan sebagai chace memori, hal ini terutama karena kecepatannya. Saat ini SRAM dapat diperoleh dengan waktu akses dua nano detik atau kurang, kira-kira mampu mengimbangi kecepatan processor 500 MHz atau lebih.
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Each [[bit]] in an SRAM is stored on four [[transistor]]s that form two cross-coupled [[logical_not|inverter]]s. This storage cell has two stable states which are used to denote '''0''' and '''1'''. Two additional ''access'' transistors serve to control the access to a storage cell during read and write operations. It thus typically takes six [[MOSFET]]s to store one memory bit.
The symmetric circuit structure allows the value of a memory location to be read much faster than in a [[Dynamic Random Access Memory|DRAM]].
Another difference with DRAM that contributes to making SRAM faster is that commercial chips accept all address bits at a time. As opposed to this, commodity DRAMs have the address multiplexed in two halves, i.e. higher bits followed by lower bits, over the same package pins in order to keep their size and cost down.
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The size of an SRAM with ''m'' address lines and ''n'' data lines is <math>2^m</math> words, or <math>2^m \times n</math> bits.
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== Jenis SRAM ==
=== Berdasarkan jenis transistor ===
* bipolar (sekarang tidak banyak digunakan:
* [[CMOS]] (jenis paling umum)
=== Berdasarkan fungsi ===
* Asynchronous (independent of clock frequency, data-in and data out are controlled
by address transistion).
* Synchronous (all timings are initiated by the clock rise/fall time. Address, data-in
and other control signals are associated with the clock signals)
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Another current role for SRAM is that it is significantly easier to work with at the hobbyist level than [[DRAM]]. There is no need to deal with the refresh cycles of DRAM, and the address and signal pins are separate rather than multiplexed. Therefore the chip has a very straightforward pin-out: power, ground, some address pins, some data pins, and three control pins "write enable", "chip enable" and "output enable". "Chip enable" is for use in systems containing multiple SRAM chips; a [[demultiplexer]], such as a 74LS154, converts some upper bits of the address into a chip-enable for one of sixteen chips.
To write to the chip, the address is presented on the address pins and the desired data on the data pins, then the appropriate chip-enable is set, and then the write-enable. To read from it, the controller first presents the address, then the chip-enable, then the output-enable.
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[[Category:Memori komputer]]▼
[[Kategori:Ram 2GB samsung GT 19082]]
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