Exynos: Perbedaan antara revisi

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Baris 25:
!Nomor model
![[Fabrikasi semikonduktor|Fab.]]
!Ukuran[[:en:Die_(integrated_circuit)|Die]]
(mm<sup>2</sup>)
![[:en:Microarchitecture|Mikroarsitektur]]
!Jumlah inti
!Frekuensi
Baris 115:
|-
|Exynos 4 Dual 4212<ref name="4212page" /><ref name="autogenerated1">{{cite web|title=Exynos 4 Dual 32nm|url=http://www.samsung.com/semiconductor/minisite/Exynos/w/solution/mobile_ap/4212/|publisher=SAMSUNG|archive-url=https://web.archive.org/web/20160815201613/http://www.samsung.com/semiconductor/minisite/Exynos/w/solution/mobile_ap/4212/|archive-date=15 August 2016|access-date=7 October 2013|url-status=live}}</ref>
| rowspan="2" |32&nbsp;nm [[:en:High-k_dielectric|HKMG]]
|
|1.5
Baris 145:
|32&nbsp;nm HKMG
|
|[[:en:ARM_Cortex-A15|Cortex-A15]]
|2
|1.7
Baris 156:
|-
|Exynos 5 Hexa 5260<ref>{{cite web|date=26 February 2014|title=Samsung Unveils New Products from its System LSI Business at Mobile World Congress|url=http://global.samsungtomorrow.com/?p=34630|archive-url=https://web.archive.org/web/20140316044700/http://global.samsungtomorrow.com/?p=34630|archive-date=16 March 2014|access-date=2 May 2014|url-status=live}}</ref><ref>{{Cite web|title=Exynos 5 Hexa (5260) product web page|url=http://www.samsung.com/semiconductor/minisite/Exynos/w/solution/mobile_ap/5_hexa/|website=Samsung Electronics|archive-url=https://web.archive.org/web/20160604212837/http://www.samsung.com/semiconductor/minisite/Exynos/w/solution/mobile_ap/5_hexa/|archive-date=4 June 2016|url-status=live}}</ref>
| rowspan="4" |[[:en:28_nanometer|28&nbsp;nm]] HKMG
|
|Cortex-A15+
Baris 179:
|1.6
1.2
|[[:en:PowerVR#Series_5|PowerVR SGX544 MP3]]
|480–532<ref>{{cite web|title=Update on GPU Optimizations in Galaxy S 4|url=http://www.anandtech.com/show/7192/update-on-gpu-optimizations-galaxy-s-4|publisher=AnandTech|archive-url=https://web.archive.org/web/20131006092554/http://www.anandtech.com/show/7192/update-on-gpu-optimizations-galaxy-s-4|archive-date=6 October 2013|access-date=7 October 2013|url-status=live}}</ref>
|49
Baris 189:
| rowspan="4" |Cortex-A15+
Cortex-A7
(big.LITTLE with [[:en:Big.little#Heterogeneous_multi-processing_(global_task_scheduling)|GTS]])
|1.9
1.3
Baris 207:
|-
|Exynos 5 Octa 5430<ref>{{cite web|title=Samsung Announces Exynos 5430: First 20nm Samsung SoC|url=http://anandtech.com/show/8382/samsung-announces-exynos-5430-first-20nm-samsung-soc|publisher=AnandTech|archive-url=http://archive.wikiwix.com/cache/20140815154207/http://anandtech.com/show/8382/samsung-announces-exynos-5430-first-20nm-samsung-soc|archive-date=15 August 2014|access-date=14 August 2014|url-status=live}}</ref><ref>{{Cite web|title=Exynos 5 Octa (5430) product webpage|url=http://www.samsung.com/semiconductor/minisite/Exynos/w/solution/mobile_ap/5430/|website=Samsung Electronics|archive-url=https://web.archive.org/web/20160815194722/http://www.samsung.com/semiconductor/minisite/Exynos/w/solution/mobile_ap/5430/|archive-date=15 August 2016|url-status=live}}</ref>
|[[:en:20_nm|20 nm]] HKMG
|110.18
|1.8
Baris 221:
|-
|Exynos 5 Octa 5800<ref>{{cite web|title=Samsung Exynos|url=http://www.samsung.com/global/business/semiconductor/minisite/Exynos/products5octa_5410.html|publisher=Samsung Tomorrow|archive-url=https://web.archive.org/web/20140703004008/http://www.samsung.com/global/business/semiconductor/minisite/Exynos/products5octa_5410.html|archive-date=3 July 2014|access-date=28 April 2014|url-status=live}}</ref>
|[[:en:28_nm|28 nm]] HKMG
|
|2.0