Kontak Ohmik: Perbedaan antara revisi
Konten dihapus Konten ditambahkan
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Baris 11:
Pembuatan kontak ohmic telah banyak dipelajari sebagai bagian dari rekayasa material yang yang merupakan suatu seni. '''oksida''' secara cepat akan terbentuk pada permukaan [[Silikon]], misalnya, kinerja kontak dapat bergantung sensitif pada rincian persiapan.
==Teknologi penting pada berbagai kontak==
{| class="wikitable"
|-----
! Material
! Contact materials
|-----
| align="center" | [[Silicon|Si]]
| align="center" | [[aluminum|Al]], Al-Si, TiSi<sub>2</sub>, [[titanium nitride|TiN]], [[tungsten|W]], MoSi<sub>2</sub>, PtSi, CoSi<sub>2</sub>, WSi<sub>2</sub>
|-----
| align="center" | [[Germanium|Ge]]
| align="center" | [[indium|In]], AuGa, AuSb
|-----
| align="center" | [[Gallium arsenide|GaAs]]
| align="center" | [http://www.semiconfareast.com/ohmic_table.htm AuGe], PdGe, Ti/Pt/Au
|-----
| align="center" | [[Gallium nitride|GaN]]
| align="center" | [http://scitation.aip.org/getabs/servlet/GetabsServlet?prog=normal&id=JVTBD9000020000004001444000001&idtype=cvips&gifs=yes Ti/Al/Ti/Au], [http://scitation.aip.org/getabs/servlet/GetabsServlet?prog=normal&id=APPLAB000073000020002953000001&idtype=cvips&gifs=yes Pd/Au]
|-----
| align="center" | [[InSb]] || align="center" | [[indium|In]]
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| align="center" | [[ZnO]]
| align="center" | [[indium tin oxide|InSnO<sub>2</sub>]], [[aluminum|Al]]
|-----
| align="center" | [[CuInSe2|CuIn<sub>1-x</sub>Ga<sub>x</sub>Se<sub>2</sub>]]
| align="center" | [[molybdenum|Mo]], [[indium tin oxide|InSnO<sub>2</sub>]]
|-----
| align="center" | [[HgCdTe]] || align="center" | [[indium|In]]
|}
Transparent or semi-transparent contacts are necessary for [[LCD#Active matrix technologies|active matrix LCD display]]s, [[optoelectronic]] devices such as [[laser diode]]s and [[photovoltaics]]. The most popular choice is [[indium tin oxide]], a metal that is formed by reactive sputtering of an In-Sn target in an oxide atmosphere.
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